sep.2000 rtc rtc circuit diagram c2e1 e2 c1 g2 e2 e1 g1 cm g1e1 e2 g2 c2e1 c1 e2 27 24 24 94 16 16 2.5 21.2 7.5 2.5 25 7 17 23 24 11 4 418 13 48 23 4 12 13.5 80 0.25 2 f 6.5 mounting holes 3?5nuts 12mm deep tab #110. t=0.5 30 +1 ?.5 label tc measured point CM200DU-12F application general purpose inverters & servo controls, etc mitsubishi igbt modules CM200DU-12F high power switching use i c ................................................................... 200a v ces ............................................................ 600v insulated type 2-elements in a pack outline drawing & circuit diagram dimensions in mm
sep.2000 v ce = v ces , v ge = 0v v ge = v ces , v ce = 0v t j = 25 c t j = 125 c v cc = 300v, i c = 200a, v ge = 15v v cc = 300v, i c = 200a v ge1 = v ge2 = 15v r g = 3.1 w , inductive load switching operation i e = 200a i e = 200a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to fin, thermal compound applied *2 (1/2 module) tc measured point is just under the chips i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 600 20 200 400 200 400 590 C40 ~ +150 C40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 mitsubishi igbt modules CM200DU-12F high power switching use v v a a a a w c c v n ? m n ? m g 1 20 2.2 54 3.6 2.0 120 100 350 250 150 2.6 0.21 0.35 0.15 *3 31 ma m a nf nf nf nc ns ns ns ns m c v c/w c/w c/w c/w w 1.6 1.6 1240 3.8 0.07 3.1 6v v 57 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c) q r g symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone g-746. * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c charged part to base plate, ac 1 min. main terminal m5 mounting holes m6 typical value symbol parameter collector current emitter current torque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit ty p. limits min. max. test conditions maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c)
sep.2000 mitsubishi igbt modules CM200DU-12F high power switching use performance curves 0.5 1.5 2.5 3.5 1234 0 50 100 150 200 250 300 350 400 0 7.5 15 11 8 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 0 0.5 1 1.5 2 2.5 3 3.5 4 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 2.5 3 2 1.5 1 0.5 0 300 400 0 100 200 5 4 3 2 1 0 16 18 20 6 8 10 12 14 10 0 10 1 23 57 10 2 23 57 10 3 23 57 10 1 10 0 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 i c = 400a i c = 200a i c = 80a t j = 25 c v cc = 300v v ge = 15v r g = 3.1 w t j = 125 c conditions: t d(off) t d(on) t f t r 9 t j =25 c v ge =20v 10 9.5 v ge = 15v t j = 25 c t j = 125 c 8.5 t j = 25 c c ies c oes c res v ge = 0v output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
sep.2000 mitsubishi igbt modules CM200DU-12F high power switching use 10 1 10 2 23 57 10 3 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 0 2 4 6 8 10 12 14 16 18 20 0 200 600 1400 1800 1000 single pulse t c = 25 c i rr i c = 200a v cc = 200v v cc = 300v conditions: v cc = 300v v ge = 15v r g = 3.1 w t j = 25 c reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) ( c/w) tmie (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) igbt part: per unit base = r th(j c) = 0.21 c/ w fwdi part: per unit base = r th(j c) = 0.35 c/ w reverse recovery time t rr (ns) reverse recovery current l rr (a) t rr
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